SiC結晶の回折トポグラフィー
X線トポグラフィーは、結晶内部の転位、欠陥、格子歪等によるＸ線回折強度の変化をコントラストを増強して画像化する手法です。 a.(0001) に近い方位（8°傾斜）の結晶表面から得られた表面反射タイプのトポグラフ（波長0. […]
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